Abstract
Using a localized orbital theory, we have studied the electronic and electrical properties of A1 chemisorbed on GaAs(110). We find that both the microscopic data and the macroscopic induced barrier are fully explained by the electronic structure of a new Al-As-Ga complex on the surface. This complex results from an exchange reaction in which Al replaces the surface Ga and an unexpected structural relaxation induced by the chemisorption of the metal.
- Received 29 January 1979
DOI:https://doi.org/10.1103/PhysRevLett.42.1094
©1979 American Physical Society
