Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites

Hanxuan Lin, Hao Liu, Lingfang Lin, Shuai Dong, Hongyan Chen, Yu Bai, Tian Miao, Yang Yu, Weichao Yu, Jing Tang, Yinyan Zhu, Yunfang Kou, Jiebin Niu, Zhaohua Cheng, Jiang Xiao, Wenbin Wang, Elbio Dagotto, Lifeng Yin, and Jian Shen
Phys. Rev. Lett. 120, 267202 – Published 28 June 2018
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Abstract

At ultrafast timescales, the initial and final states of a first-order metal-insulator transition often coexist forming clusters of the two phases. Here, we report an unexpected third long-lived intermediate state emerging at the photoinduced first-order metal-insulator transition of La0.325Pr0.3Ca0.375MnO3, known to display submicrometer length-scale phase separation. Using magnetic force microscopy and time-dependent magneto-optical Kerr effect, we determined that the third state is a nanoscale mixture of the competing ferromagnetic metallic and charge-ordered insulating phases, with its own physical properties. This discovery bridges the two different families of colossal magnetoresistant manganites known experimentally and shows for the first time that the associated states predicted by theory can coexist in a single sample.

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  • Received 9 March 2018
  • Revised 9 May 2018

DOI:https://doi.org/10.1103/PhysRevLett.120.267202

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hanxuan Lin1, Hao Liu1, Lingfang Lin2, Shuai Dong2, Hongyan Chen1, Yu Bai1, Tian Miao1, Yang Yu1, Weichao Yu1, Jing Tang3, Yinyan Zhu1, Yunfang Kou1, Jiebin Niu1, Zhaohua Cheng3, Jiang Xiao1,4,5, Wenbin Wang1,4, Elbio Dagotto6,7,†, Lifeng Yin1,4,5,‡, and Jian Shen1,4,5,§

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
  • 2School of Physics, Southeast University, Nanjing 211189, China
  • 3Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 4Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 5Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 6Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
  • 7Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

  • *To whom correspondence should be addressed.
  • edagotto@utk.edu
  • lifengyin@fudan.edu.cn
  • §shenj5494@fudan.edu.cn

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Issue

Vol. 120, Iss. 26 — 29 June 2018

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