Robust Helical Edge Transport in Gated InAs/GaSb Bilayers

Lingjie Du, Ivan Knez, Gerard Sullivan, and Rui-Rui Du
Phys. Rev. Lett. 114, 096802 – Published 4 March 2015
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Abstract

We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e2/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12 T applied in-plane field; the conductance increases from 2e2/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.

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  • Received 8 December 2014

DOI:https://doi.org/10.1103/PhysRevLett.114.096802

© 2015 American Physical Society

Authors & Affiliations

Lingjie Du1, Ivan Knez1,2, Gerard Sullivan3, and Rui-Rui Du1,*

  • 1Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA
  • 2IBM Research–Almaden, San Jose, California 95120, USA
  • 3Teledyne Scientific and Imaging, Thousand Oaks, California 91630, USA

  • *rrd@rice.edu

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Issue

Vol. 114, Iss. 9 — 6 March 2015

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