Abstract
We propose to engineer time-reversal-invariant topological insulators in two-dimensional crystals of transition-metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop spin-polarized Landau levels residing in different valleys. We argue that gaps between Landau levels in the range of 10–100 K are within experimental reach. In addition, we point out that a superlattice arising from a moiré pattern can lead to topologically nontrivial subbands. As a result, the edge transport becomes quantized, which can be probed in multiterminal devices made using strained 2D crystals and/or heterostructures. The strong character of valence and conduction bands may also allow for the investigation of the effects of electron correlations on the topological phases.
- Received 25 December 2013
DOI:https://doi.org/10.1103/PhysRevLett.113.077201
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