Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer

S. H. Nie, Y. Y. Chin, W. Q. Liu, J. C. Tung, J. Lu, H. J. Lin, G. Y. Guo, K. K. Meng, L. Chen, L. J. Zhu, D. Pan, C. T. Chen, Y. B. Xu, W. S. Yan, and J. H. Zhao
Phys. Rev. Lett. 111, 027203 – Published 9 July 2013
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Abstract

The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24Oe and 23Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.

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  • Received 5 February 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.027203

© 2013 American Physical Society

Authors & Affiliations

S. H. Nie1, Y. Y. Chin2, W. Q. Liu3, J. C. Tung4, J. Lu1, H. J. Lin2, G. Y. Guo4,5,*,†, K. K. Meng1, L. Chen1, L. J. Zhu1, D. Pan1, C. T. Chen2, Y. B. Xu3, W. S. Yan6, and J. H. Zhao1,*,‡

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
  • 3Department of Electronics, University of York, Heslington, York YO10 5DD, United Kingdom
  • 4Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan
  • 5Department of Physics, National Taiwan University, Taipei 10617, Taiwan
  • 6National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei 230029, China

  • *Authors to whom all correspondence should be addressed.
  • gyguo@phys.ntu.edu.tw
  • jhzhao@red.semi.ac.cn

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Issue

Vol. 111, Iss. 2 — 12 July 2013

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