Ferroelectric Instability Under Screened Coulomb Interactions

Yong Wang, Xiaohui Liu, J. D. Burton, Sitaram S. Jaswal, and Evgeny Y. Tsymbal
Phys. Rev. Lett. 109, 247601 – Published 10 December 2012
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Abstract

We explore the effect of charge carrier doping on ferroelectricity using density functional calculations and phenomenological modeling. By considering a prototypical ferroelectric material, BaTiO3, we demonstrate that ferroelectric displacements are sustained up to the critical concentration of 0.11 electron per unit cell volume. This result is consistent with experimental observations and reveals that the ferroelectric phase and conductivity can coexist. Our investigations show that the ferroelectric instability requires only a short-range portion of the Coulomb force with an interaction range of the order of the lattice constant. These results provide a new insight into the origin of ferroelectricity in displacive ferroelectrics and open opportunities for using doped ferroelectrics in novel electronic devices.

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  • Received 28 August 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.247601

© 2012 American Physical Society

Authors & Affiliations

Yong Wang*, Xiaohui Liu, J. D. Burton, Sitaram S. Jaswal, and Evgeny Y. Tsymbal

  • Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA

  • *Present address: Pacific Northwest National Laboratory, Richland, Washington 99352, USA.
  • tsymbal@unl.edu

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Issue

Vol. 109, Iss. 24 — 14 December 2012

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