Abstract
We present de Haas–van Alphen and resistivity data on single crystals of the delafossite . At 295 K we measure an in-plane resistivity of , making the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is , approximately lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
- Received 20 February 2012
DOI:https://doi.org/10.1103/PhysRevLett.109.116401
© 2012 American Physical Society