Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

Clifford W. Hicks, Alexandra S. Gibbs, Andrew P. Mackenzie, Hiroshi Takatsu, Yoshiteru Maeno, and Edward A. Yelland
Phys. Rev. Lett. 109, 116401 – Published 10 September 2012
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Abstract

We present de Haas–van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is 20μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

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  • Received 20 February 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.116401

© 2012 American Physical Society

Authors & Affiliations

Clifford W. Hicks1, Alexandra S. Gibbs1,2, Andrew P. Mackenzie1,*, Hiroshi Takatsu3, Yoshiteru Maeno4, and Edward A. Yelland1,5

  • 1Scottish Universities Physics Alliance (SUPA), School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom
  • 2School of Chemistry and EaStCHEM, University of St. Andrews, North Haugh, St. Andrews KY16 9ST, United Kingdom
  • 3Department of Physics, Tokyo Metropolitan University, Tokyo 192-0397, Japan
  • 4Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
  • 5SUPA, School of Physics and Astronomy, and Centre for Science at Extreme Conditions, University of Edinburgh, Mayfield Road, Edinburgh EH9 3JZ, United Kingdom

  • *apm9@st-andrews.ac.uk

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Issue

Vol. 109, Iss. 11 — 14 September 2012

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