n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level

G. Scappucci, O. Warschkow, G. Capellini, W. M. Klesse, D. R. McKenzie, and M. Y. Simmons
Phys. Rev. Lett. 109, 076101 – Published 13 August 2012

Abstract

To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH2+H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH2+H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.

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  • Received 16 March 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.076101

© 2012 American Physical Society

Authors & Affiliations

G. Scappucci1,*, O. Warschkow2, G. Capellini3, W. M. Klesse1, D. R. McKenzie2, and M. Y. Simmons1

  • 1School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052, Australia
  • 2School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, University of Sydney, Sydney, NSW 2006, Australia
  • 3Dipartimento di Fisica “E. Amaldi,” Università di Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy

  • *giordano.scappucci@unsw.edu.au

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Vol. 109, Iss. 7 — 17 August 2012

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