Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides

Di Xiao, Gui-Bin Liu, Wanxiang Feng, Xiaodong Xu, and Wang Yao
Phys. Rev. Lett. 108, 196802 – Published 7 May 2012

Abstract

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence-band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley-contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photoinduced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multivalley materials with strong spin-orbit coupling and inversion symmetry breaking.

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  • Received 21 December 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.196802

© 2012 American Physical Society

Authors & Affiliations

Di Xiao1,*, Gui-Bin Liu2, Wanxiang Feng1,3,4, Xiaodong Xu5,6, and Wang Yao2,†

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
  • 2Department of Physics and Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
  • 3Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
  • 4Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 5Department of Physics, University of Washington, Seattle, Washington 98195, USA
  • 6Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, USA

  • *Corresponding author. xiaod@ornl.gov
  • Corresponding author. wangyao@hkucc.hku.hk

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Issue

Vol. 108, Iss. 19 — 11 May 2012

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