Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure

Seyoung Kim, Insun Jo, D. C. Dillen, D. A. Ferrer, B. Fallahazad, Z. Yao, S. K. Banerjee, and E. Tutuc
Phys. Rev. Lett. 108, 116404 – Published 14 March 2012

Abstract

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system by employing a double-layer heterostructure. We illustrate this method by using a graphene double layer to probe the Fermi energy as a function of carrier density in monolayer graphene, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.

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  • Received 13 November 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.116404

© 2012 American Physical Society

Authors & Affiliations

Seyoung Kim1, Insun Jo2, D. C. Dillen1, D. A. Ferrer1, B. Fallahazad1, Z. Yao2, S. K. Banerjee1, and E. Tutuc1,*

  • 1Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
  • 2Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • *etutuc@mail.utexas.edu

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Vol. 108, Iss. 11 — 16 March 2012

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