Quantum Hall Effect in Twisted Bilayer Graphene

Dong Su Lee, Christian Riedl, Thomas Beringer, A. H. Castro Neto, Klaus von Klitzing, Ulrich Starke, and Jurgen H. Smet
Phys. Rev. Lett. 107, 216602 – Published 16 November 2011

Abstract

We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling.

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  • Received 29 June 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.216602

© 2011 American Physical Society

Authors & Affiliations

Dong Su Lee1, Christian Riedl1, Thomas Beringer1, A. H. Castro Neto2,3, Klaus von Klitzing1, Ulrich Starke1, and Jurgen H. Smet1

  • 1Max-Planck-Institut für Festköperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
  • 2Graphene Research Center and Department of Physics, National University of Singapore, Singapore, 117542
  • 3Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA

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Issue

Vol. 107, Iss. 21 — 18 November 2011

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