Strong Correlation of Electronic and Lattice Excitations in GaAs/AlGaAs Semiconductor Quantum Wells Revealed by Two-Dimensional Terahertz Spectroscopy

W. Kuehn, K. Reimann, M. Woerner, T. Elsaesser, R. Hey, and U. Schade
Phys. Rev. Lett. 107, 067401 – Published 3 August 2011

Abstract

Coulomb-mediated interactions between intersubband excitations of electrons in GaAs/AlGaAs double quantum wells and longitudinal optical phonons are studied by two-dimensional spectroscopy in the terahertz frequency range. The multitude of diagonal and off-diagonal peaks in the 2D spectrum gives evidence of strong polaronic signatures in the nonlinear response. A quantitative theoretical analysis reveals a dipole coupling of electrons to the polar lattice that is much stronger than in bulk GaAs, due to a dynamic localization of the electron wave function by scattering processes.

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  • Received 7 January 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.067401

© 2011 American Physical Society

Authors & Affiliations

W. Kuehn1, K. Reimann1, M. Woerner1,*, T. Elsaesser1, R. Hey2, and U. Schade3

  • 1Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
  • 2Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
  • 3Helmholtz-Zentrum Berlin für Materialien und Energie, 12489 Berlin, Germany

  • *woerner@mbi-berlin.de

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Vol. 107, Iss. 6 — 5 August 2011

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