Metal-Insulator Transition in Ultrathin LaNiO3 Films

R. Scherwitzl, S. Gariglio, M. Gabay, P. Zubko, M. Gibert, and J.-M. Triscone
Phys. Rev. Lett. 106, 246403 – Published 14 June 2011

Abstract

Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film’s thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low-temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin-glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.

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  • Received 26 January 2011

DOI:https://doi.org/10.1103/PhysRevLett.106.246403

© 2011 American Physical Society

Authors & Affiliations

R. Scherwitzl1,*, S. Gariglio1, M. Gabay2, P. Zubko1, M. Gibert1, and J.-M. Triscone1

  • 1DPMC, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Genève 4, Switzerland
  • 2Laboratoire de Physique des Solides, Université Paris-Sud 11, Centre d’Orsay, 91405 Orsay Cedex, France

  • *raoul.scherwitzl@unige.ch

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Vol. 106, Iss. 24 — 17 June 2011

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