Impurity Effect on Weak Antilocalization in the Topological Insulator Bi2Te3

Hong-Tao He, Gan Wang, Tao Zhang, Iam-Keong Sou, George K. L Wong, Jian-Nong Wang, Hai-Zhou Lu, Shun-Qing Shen, and Fu-Chun Zhang
Phys. Rev. Lett. 106, 166805 – Published 21 April 2011

Abstract

We study the weak antilocalization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi2Te3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.

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  • Received 31 July 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.166805

© 2011 American Physical Society

Authors & Affiliations

Hong-Tao He1, Gan Wang1,2, Tao Zhang1,2, Iam-Keong Sou1, George K. L Wong1, and Jian-Nong Wang1,*

  • 1Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
  • 2Nano Science and Technology Program, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China

Hai-Zhou Lu, Shun-Qing Shen, and Fu-Chun Zhang

  • Department of Physics and Center for Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China

  • *Corresponding author: phjwang@ust.hk

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Vol. 106, Iss. 16 — 22 April 2011

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