Abstract
Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted -electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.
- Received 26 July 2010
DOI:https://doi.org/10.1103/PhysRevLett.105.196102
© 2010 The American Physical Society
Synopsis
Graphene’s prisoners
Published 5 November 2010
Controlling defects on graphene that trap migrating metal atoms may lead to superior device fabrication.
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