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Migration and Localization of Metal Atoms on Strained Graphene

Ovidiu Cretu, Arkady V. Krasheninnikov, Julio A. Rodríguez-Manzo, Litao Sun, Risto M. Nieminen, and Florian Banhart
Phys. Rev. Lett. 105, 196102 – Published 5 November 2010
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Abstract

Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted π-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.

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  • Received 26 July 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.196102

© 2010 The American Physical Society

Synopsis

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Graphene’s prisoners

Published 5 November 2010

Controlling defects on graphene that trap migrating metal atoms may lead to superior device fabrication.

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Authors & Affiliations

Ovidiu Cretu1, Arkady V. Krasheninnikov2,3, Julio A. Rodríguez-Manzo1, Litao Sun1,4, Risto M. Nieminen3, and Florian Banhart1,*

  • 1Institut de Physique et Chimie des Matériaux, UMR 7504 CNRS, Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg, France
  • 2Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland
  • 3Department of Applied Physics, Aalto University, P.O. Box 1100, FI-00076 Aalto, Finland
  • 4SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Si-Pai-Lou 2, Nanjing 210096, China

  • *Banhart@ipcms.u-strasbg.fr

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Issue

Vol. 105, Iss. 19 — 5 November 2010

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