Single-Electron Transport through Single Dopants in a Dopant-Rich Environment

Michiharu Tabe, Daniel Moraru, Maciej Ligowski, Miftahul Anwar, Ryszard Jablonski, Yukinori Ono, and Takeshi Mizuno
Phys. Rev. Lett. 105, 016803 – Published 2 July 2010

Abstract

We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 25 September 2009

DOI:https://doi.org/10.1103/PhysRevLett.105.016803

©2010 American Physical Society

Authors & Affiliations

Michiharu Tabe1,*, Daniel Moraru1, Maciej Ligowski1,2, Miftahul Anwar1, Ryszard Jablonski2, Yukinori Ono3, and Takeshi Mizuno1

  • 1Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
  • 2Division of Sensors and Measuring Systems, Warsaw University of Technology, A. Boboli 8, Warsaw 02-525, Poland
  • 3NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 010-8502, Japan

  • *romtabe@rie.shizuoka.ac.jp

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 105, Iss. 1 — 2 July 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×