Anomalous Hall Effect in Field-Effect Structures of (Ga,Mn)As

D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl, and H. Ohno
Phys. Rev. Lett. 104, 106601 – Published 12 March 2010
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Abstract

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance σxy has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between σxy and σxx, similar to the one observed previously for thicker samples, is recovered.

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  • Received 26 June 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.106601

©2010 American Physical Society

Authors & Affiliations

D. Chiba1,2,3, A. Werpachowska4, M. Endo2, Y. Nishitani2, F. Matsukura2,1, T. Dietl4,5, and H. Ohno2,1

  • 1Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075, Japan
  • 2Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi 980-8577, Japan
  • 3Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
  • 4Institute of Physics, Polish Academy of Sciences, PL-02 668 Warszawa, Poland
  • 5Institute of Theoretical Physics, University of Warsaw, ul. Hoża 69, PL-00 681 Warszawa, Poland

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Issue

Vol. 104, Iss. 10 — 12 March 2010

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