Abstract
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between and , similar to the one observed previously for thicker samples, is recovered.
- Received 26 June 2009
DOI:https://doi.org/10.1103/PhysRevLett.104.106601
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