High Island Densities in Pulsed Laser Deposition: Causes and Implications

M. Schmid, C. Lenauer, A. Buchsbaum, F. Wimmer, G. Rauchbauer, P. Scheiber, G. Betz, and P. Varga
Phys. Rev. Lett. 103, 076101 – Published 10 August 2009

Abstract

By studying metal growth on Pt(111), we determine the reasons for the high island densities observed in pulsed laser deposition (PLD) compared to conventional thermal deposition. For homoepitaxy by PLD with moderate energies (100eV) of the deposited ions, high island densities are caused by the high instantaneous flux of arriving particles. Additional nuclei are formed at high ion energies (200eV) by adatoms created by the impinging ions. For heteroepitaxy, the island density is also increased by intermixing (deposited material implanted in the surface), creating an inhomogeneous potential energy surface for diffusing atoms. We discuss implications for layer-by-layer growth and sputter deposition.

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  • Received 11 May 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.076101

©2009 American Physical Society

Authors & Affiliations

M. Schmid, C. Lenauer, A. Buchsbaum, F. Wimmer, G. Rauchbauer, P. Scheiber, G. Betz, and P. Varga

  • Institut für Allgemeine Physik, Technische Universität Wien, 1040 Wien, Austria

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Issue

Vol. 103, Iss. 7 — 14 August 2009

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