Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments

Chuanhong Jin, Fang Lin, Kazu Suenaga, and Sumio Iijima
Phys. Rev. Lett. 102, 195505 – Published 14 May 2009
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Abstract

A freestanding single layer of hexagonal boron nitride (h-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in h-BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.

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  • Received 28 January 2009

DOI:https://doi.org/10.1103/PhysRevLett.102.195505

©2009 American Physical Society

Authors & Affiliations

Chuanhong Jin1,2,*, Fang Lin3,†, Kazu Suenaga1,‡, and Sumio Iijima1,2

  • 1Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
  • 2Department of Materials Science and Engineering, Meijo University, Tenpaku-ku, Nagoya 468-8502, Japan
  • 3College of Science, South China Agricultural University, Guangzhou 510642, People’s Republic of China

  • *chuanhong-jin@aist.go.jp
  • linfang@scau.edu.cn
  • suenaga-kazu@aist.go.jp

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Issue

Vol. 102, Iss. 19 — 15 May 2009

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