Abstract
A freestanding single layer of hexagonal boron nitride (-BN) has been successfully fabricated by controlled energetic electron irradiation through a layer-by-layer sputtering process. We have successfully resolved atomic defects in -BN with triangle shapes by means of an aberration corrected high-resolution transmission electron microscopy with exit-wave reconstruction. Boron monovacancies are found to be preferably formed and the dominating zigzag-type edges are proved to be nitrogen terminated.
- Received 28 January 2009
DOI:https://doi.org/10.1103/PhysRevLett.102.195505
©2009 American Physical Society