Quantum Goos-Hänchen Effect in Graphene

C. W. J. Beenakker, R. A. Sepkhanov, A. R. Akhmerov, and J. Tworzydło
Phys. Rev. Lett. 102, 146804 – Published 9 April 2009

Abstract

The Goos-Hänchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift σ of the reflected beam along the interface. We show that the GH effect at a pn interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of σ at angle of incidence α*=arcsinsinαc determined by the critical angle αc for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a twofold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e2/h of the conductance with increasing channel width.

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  • Received 31 December 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.146804

©2009 American Physical Society

Authors & Affiliations

C. W. J. Beenakker1, R. A. Sepkhanov1, A. R. Akhmerov1, and J. Tworzydło2

  • 1Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
  • 2Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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Issue

Vol. 102, Iss. 14 — 10 April 2009

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