Oxygen Exchange at the Internal Surface of Amorphous SiO2 Studied by Photoluminescence of Isotopically Labeled Oxygen Molecules

Koichi Kajihara, Taisuke Miura, Hayato Kamioka, Masahiro Hirano, Linards Skuja, and Hideo Hosono
Phys. Rev. Lett. 102, 175502 – Published 27 April 2009

Abstract

The exchange between lattice and interstitial oxygen species in an oxide was studied by the O16O18 isotope shift of the a1Δg(v=0)X3Σg(v=1) infrared photoluminescence band of the oxygen molecules (O2) incorporated into the interstitial voids of amorphous SiO2 (aSiO2) by thermal annealing in O218 gas. A large site to site variation of the oxygen exchange rate, originating from structural disorder of aSiO2, is found. The average exchange rate has an activation energy of 2eV, which is much larger than that for the diffusion of interstitial O2 (0.81.2eV). The average exchange-free diffusion length of interstitial O2 exceeds 1μm below 900°C, providing definite evidence that oxygen diffuses as interstitial molecules in aSiO2.

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  • Received 12 February 2009

DOI:https://doi.org/10.1103/PhysRevLett.102.175502

©2009 American Physical Society

Authors & Affiliations

Koichi Kajihara1,2,*, Taisuke Miura3, Hayato Kamioka4, Masahiro Hirano1,6, Linards Skuja1,5, and Hideo Hosono1,6

  • 1Transparent Electro-Active Materials Project, ERATO-SORST, Japan Science and Technology Agency, in Frontier Research Center, S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • 2Department of Applied Chemistry, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji 192-0397, Japan
  • 3Research & Development Division, OMRON Laserfront Inc., 1120 Shimokuzawa, Sagamihara 229-1198, Japan
  • 4Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571, Japan
  • 5Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV1063 Riga, Latvia
  • 6Materials and Structures Laboratory & Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

  • *Author to whom correspondence should be addressed: kkaji@tmu.ac.jp

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Vol. 102, Iss. 17 — 1 May 2009

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