Abstract
The carrier mobility of few-layer graphene (FLG) field-effect transistors increases tenfold when the substrate is replaced by single-crystal epitaxial (PZT). In the electron-only regime of the FLG, reaches at 300 K for , 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to at low temperature. The temperature-dependent resistivity reveals a clear signature of LA phonon scattering, yielding a deformation potential .
- Received 17 September 2008
DOI:https://doi.org/10.1103/PhysRevLett.102.136808
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