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Temperature-Dependent Transport in Suspended Graphene

K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, and P. Kim
Phys. Rev. Lett. 101, 096802 – Published 25 August 2008
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Abstract

The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5<T<240K. At T5K transport is near-ballistic in a device of 2μm dimension and a mobility 170000cm2/Vs. At large carrier density, n>0.5×1011cm2, the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is 120000cm2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <108cm2.

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  • Received 23 April 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.096802

©2008 American Physical Society

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Published 25 August 2008

Graphene has been idealized as a two-dimensional electron system in which the electrons behave like massless fermions, but how “perfect” is it? Scientists now show they can prepare free-standing sheets of graphene that have some of the highest electron mobilities of any inorganic semiconductor.

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Authors & Affiliations

K. I. Bolotin1, K. J. Sikes2, J. Hone3, H. L. Stormer1,2,4, and P. Kim1

  • 1Department of Physics, Columbia University, New York, New York 10027, USA
  • 2Department of Applied Physics, Columbia University, New York, New York 10027, USA
  • 3Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
  • 4Bell Labs, Alcatel-Lucent Technologies, Murray Hill, New Jersey 07974, USA

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Issue

Vol. 101, Iss. 9 — 29 August 2008

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