Abstract
The resistivity of ultraclean suspended graphene is strongly temperature () dependent for . At transport is near-ballistic in a device of dimension and a mobility . At large carrier density, , the resistivity increases with increasing and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At the mobility is , higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing , consistent with a density inhomogeneity .
- Received 23 April 2008
DOI:https://doi.org/10.1103/PhysRevLett.101.096802
©2008 American Physical Society
Viewpoint
Flatland exposed
Published 25 August 2008
Graphene has been idealized as a two-dimensional electron system in which the electrons behave like massless fermions, but how “perfect” is it? Scientists now show they can prepare free-standing sheets of graphene that have some of the highest electron mobilities of any inorganic semiconductor.
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