Suppression of Electron Spin Relaxation in Mn-Doped GaAs

G. V. Astakhov, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, M. N. Tkachuk, Yu. G. Kusrayev, T. Kiessling, W. Ossau, and L. W. Molenkamp
Phys. Rev. Lett. 101, 076602 – Published 15 August 2008

Abstract

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.

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  • Received 27 September 2007

DOI:https://doi.org/10.1103/PhysRevLett.101.076602

©2008 American Physical Society

Authors & Affiliations

G. V. Astakhov1,*, R. I. Dzhioev2, K. V. Kavokin2, V. L. Korenev2, M. V. Lazarev2, M. N. Tkachuk2, Yu. G. Kusrayev2, T. Kiessling1, W. Ossau1, and L. W. Molenkamp1

  • 1Physikalisches Institut (EP3), Universität Würzburg, 97074 Würzburg, Germany
  • 2A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

  • *Also at A. F. Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia. astakhov@physik.uni-wuerzburg.de

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Vol. 101, Iss. 7 — 15 August 2008

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