Mott Relation for Anomalous Hall and Nernst Effects in Ga1xMnxAs Ferromagnetic Semiconductors

Yong Pu, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno, and Jing Shi
Phys. Rev. Lett. 101, 117208 – Published 12 September 2008

Abstract

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

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  • Received 30 May 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.117208

©2008 American Physical Society

Authors & Affiliations

Yong Pu1, Daichi Chiba2, Fumihiro Matsukura2, Hideo Ohno2, and Jing Shi1

  • 1Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
  • 2Semiconductor Spintronics Project, ERATO-JST, Tokyo, Japan, and Laboratory of Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

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Vol. 101, Iss. 11 — 12 September 2008

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