Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3

Y. Kozuka, T. Susaki, and H. Y. Hwang
Phys. Rev. Lett. 101, 096601 – Published 27 August 2008
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Abstract

We explore the extreme quantum limit of photogenerated electrons in quantum paraelectric SrTiO3. This regime is distinct from conventional semiconductors, due to the large electron effective mass and large dielectric constant. At low temperature, the magnetoresistance and Hall resistivity saturate at a high magnetic field, deviating from conventional behavior. As a result, the Hall coefficient vanishes on the scale of the ratio of the Landau level splitting to the thermal energy, indicating the essential role of lowest Landau level occupancy, as limited by thermal broadening.

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  • Received 5 March 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.096601

©2008 American Physical Society

Authors & Affiliations

Y. Kozuka1,*, T. Susaki1, and H. Y. Hwang1,2

  • 1Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
  • 2Japan Science and Technology Agency, Kawaguchi, 332-0012, Japan

  • *kk077105@mail.ecc.u-tokyo.ac.jp

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Issue

Vol. 101, Iss. 9 — 29 August 2008

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