Spin Manipulation in Co-Doped ZnO

Qingyu Xu, Lars Hartmann, Shengqiang Zhou, Arndt Mcklich, Manfred Helm, Gisela Biehne, Holger Hochmuth, Michael Lorenz, Marius Grundmann, and Heidemarie Schmidt
Phys. Rev. Lett. 101, 076601 – Published 11 August 2008

Abstract

We report the clearly observed tunneling magnetoresistance at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom ferromagnetic electrode and Co as a top ferromagnetic electrode prepared by pulsed laser deposition. Spin-polarized electrons were injected from Co-doped ZnO to the crystallized Al2O3 and tunnelled through the amorphous Al2O3 barrier. Our studies demonstrate the spin polarization in Co-doped ZnO and its possible application in future ZnO-based spintronics devices.

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  • Received 28 April 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.076601

©2008 American Physical Society

Authors & Affiliations

Qingyu Xu1,*, Lars Hartmann2, Shengqiang Zhou1, Arndt Mcklich1, Manfred Helm1, Gisela Biehne3, Holger Hochmuth3, Michael Lorenz3, Marius Grundmann3, and Heidemarie Schmidt1

  • 1Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf e.V., Bautzner Landstraße 128, 01328 Dresden, Germany
  • 2Solarion AG/Photovoltaics, Ostende 5, 04288 Leipzig, Germany
  • 3Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany

  • *Corresponding author. xuqingyu_1974@yahoo.com

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Vol. 101, Iss. 7 — 15 August 2008

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