Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

Kiyohiko Toyama, Takahisa Nishioka, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Phys. Rev. Lett. 101, 016805 – Published 2 July 2008

Abstract

Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

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  • Received 26 February 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.016805

©2008 American Physical Society

Authors & Affiliations

Kiyohiko Toyama1, Takahisa Nishioka1, Kentarou Sawano2, Yasuhiro Shiraki2, and Tohru Okamoto1

  • 1Department of Physics, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

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Issue

Vol. 101, Iss. 1 — 4 July 2008

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