Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide

Seungchul Kim, Jisoon Ihm, Hyoung Joon Choi, and Young-Woo Son
Phys. Rev. Lett. 100, 176802 – Published 29 April 2008

Abstract

On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasiperiodic 6×6 domain pattern emerges out of a larger commensurate 63×63R30° periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues in epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.

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  • Received 18 December 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.176802

©2008 American Physical Society

Authors & Affiliations

Seungchul Kim1, Jisoon Ihm1, Hyoung Joon Choi2, and Young-Woo Son3,*

  • 1Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
  • 2Department of Physics and IPAP, Yonsei University, Seoul 120-749, Korea
  • 3Department of Physics, Konkuk University, Seoul 143-701, Korea

  • *To whom correspondence should be addressed. youngwoo@konkuk.ac.kr

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Vol. 100, Iss. 17 — 2 May 2008

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