Polaron Motional Narrowing of Electron Spin Resonance in Organic Field-Effect Transistors

Hiroyuki Matsui, Tatsuo Hasegawa, Yoshinori Tokura, Maki Hiraoka, and Toshikazu Yamada
Phys. Rev. Lett. 100, 126601 – Published 27 March 2008

Abstract

Polaron states in organic thin-film transistors (TFTs) were investigated by the electron spin resonance (ESR) technique. Gate-field-dependent and temperature-dependent single-Lorentzian ESR spectra were observed for field-induced polarons in pentacene TFTs, demonstrating the effect of motional narrowing due to polaron diffusion. Analyses of the ESR linewidth revealed a considerably long trapping time (τC0.7ns), the variation of which is discussed in terms of the multiple trap-and-release model.

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  • Received 2 October 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.126601

©2008 American Physical Society

Authors & Affiliations

Hiroyuki Matsui, Tatsuo Hasegawa, and Yoshinori Tokura

  • Correlated Electron Research Center (CERC), AIST, Tsukuba 305-8562, Japan
  • Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan

Maki Hiraoka and Toshikazu Yamada

  • Correlated Electron Research Center (CERC), AIST, Tsukuba 305-8562, Japan

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Issue

Vol. 100, Iss. 12 — 28 March 2008

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