Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks

A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. Wiggers
Phys. Rev. Lett. 100, 026803 – Published 16 January 2008

Abstract

We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes.

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  • Received 25 July 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.026803

©2008 American Physical Society

Authors & Affiliations

A. R. Stegner, R. N. Pereira*, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, and M. Stutzmann

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

H. Wiggers

  • Institut für Verbrennung und Gasdynamik, Universität Duisburg-Essen, 47048 Duisburg, Germany

  • *pereira@wsi.tum.de

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Vol. 100, Iss. 2 — 18 January 2008

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