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Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

Xinran Wang, Yijian Ouyang, Xiaolin Li, Hailiang Wang, Jing Guo, and Hongjie Dai
Phys. Rev. Lett. 100, 206803 – Published 20 May 2008
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Abstract

Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 106 and on-state current density as high as 2000μA/μm. We estimated carrier mobility 200cm2/Vs and scattering mean free path 10nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.

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  • Received 21 March 2008

DOI:https://doi.org/10.1103/PhysRevLett.100.206803

©2008 American Physical Society

Authors & Affiliations

Xinran Wang1, Yijian Ouyang2, Xiaolin Li1, Hailiang Wang1, Jing Guo2, and Hongjie Dai1,*

  • 1Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
  • 2Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA

  • *To whom all correspondence should be addressed. hdai@stanford.edu

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Vol. 100, Iss. 20 — 23 May 2008

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