Abstract
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with ratio up to and on-state current density as high as . We estimated carrier mobility and scattering mean free path in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter () carbon nanotube FETs with Pd contacts in on-state current density and ratio, but have the advantage of producing all-semiconducting devices.
- Received 21 March 2008
DOI:https://doi.org/10.1103/PhysRevLett.100.206803
©2008 American Physical Society