Direct Measurement of the Binding Energy and Bohr Radius of a Single Hydrogenic Defect in a Semiconductor Quantum Well

Simon Perraud, Kiyoshi Kanisawa, Zhao-Zhong Wang, and Toshimasa Fujisawa
Phys. Rev. Lett. 100, 056806 – Published 7 February 2008

Abstract

Low-temperature scanning tunneling spectroscopy under ultrahigh vacuum was used to study donor point defects located at the epitaxial surface of an In0.53Ga0.47As quantum well. The electronic local density of states was measured with nanoscale resolution in the vicinity of single defects. In this way, both the binding energy and the Bohr radius of the defects could be determined. The binding energy and the Bohr radius were found to be functions of the quantum well thickness, in quantitative agreement with variational calculations of hydrogenic impurity states.

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  • Received 15 August 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.056806

©2008 American Physical Society

Authors & Affiliations

Simon Perraud1,2, Kiyoshi Kanisawa1,*, Zhao-Zhong Wang2, and Toshimasa Fujisawa1

  • 1NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
  • 2Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France

  • *kani@will.brl.ntt.co.jp

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Issue

Vol. 100, Iss. 5 — 8 February 2008

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