Abstract
We analyze the dynamics of charge distributions in weakly coupled, doped, dc voltage biased semiconductor superlattices subject to voltage steps of different sizes. Qualitatively different current responses to voltage switching processes have been observed experimentally. We explain them by invoking distinct scenarios for electric-field domain formation, validated by numerical simulations. Furthermore, we investigate the transient from an unstable to a stable point in the current-voltage characteristics after a steplike or ramplike increase of the external voltage.
- Received 19 December 2000
DOI:https://doi.org/10.1103/PhysRevE.63.066207
©2001 American Physical Society