Dynamic scenarios of multistable switching in semiconductor superlattices

A. Amann, A. Wacker, L. L. Bonilla, and E. Schöll
Phys. Rev. E 63, 066207 – Published 16 May 2001
PDFExport Citation

Abstract

We analyze the dynamics of charge distributions in weakly coupled, doped, dc voltage biased semiconductor superlattices subject to voltage steps of different sizes. Qualitatively different current responses to voltage switching processes have been observed experimentally. We explain them by invoking distinct scenarios for electric-field domain formation, validated by numerical simulations. Furthermore, we investigate the transient from an unstable to a stable point in the current-voltage characteristics after a steplike or ramplike increase of the external voltage.

  • Received 19 December 2000

DOI:https://doi.org/10.1103/PhysRevE.63.066207

©2001 American Physical Society

Authors & Affiliations

A. Amann1, A. Wacker1, L. L. Bonilla2, and E. Schöll1,3

  • 1Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
  • 2Escuela Politécnica Superior, Universidad Carlos III, Avenida de la Universidad 30, 28911 Leganés, Spain
  • 3Department of Physics, Duke University, Durham, North Carolina 27708-0305

References (Subscription Required)

Click to Expand
Issue

Vol. 63, Iss. 6 — June 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review E

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×