Abstract
The glass transition temperature and the temperature corresponding to the peak in the dielectric loss due to the process have been simultaneously determined as functions of film thickness d through dielectric measurements for polystyrene thin films supported on glass substrate. The dielectric loss peaks have also been investigated as functions of frequency for a given temperature. A decrease in was observed with decreasing film thickness, while was found to remain almost constant for and to decrease drastically with decreasing d for Here, is a critical thickness dependent on molecular weight. The relaxation time of the process, which was measured as the frequency at which the dielectric loss realizes its peak value at a given temperature, was found to have a d dependence similar to that of The relaxation function for the process was obtained by using the observed frequency dependence of the peak profile of the dielectric loss. The exponent which was obtained from the relaxation functions, decreases as thickness decreases. This suggests that the distribution of relaxation times for the process broadens with decreasing thickness. The thickness dependence of is directly related to the distribution of relaxation times for the process, not to the relaxation time itself. The value of the thermal expansion coefficient normal to the film surface was found to increase with decreasing film thickness below but to decrease with decreasing film thickness above These experimental results are discussed in the context of a three-layer model in which within thin films there are three layers with different mobilities and glass transition temperatures.
- Received 8 July 1999
DOI:https://doi.org/10.1103/PhysRevE.61.1743
©2000 American Physical Society