Switchable valley injection into graphene

Chen Hu, Wengang Lu, Wei Ji, Guanghua Yu, Yu Yan, and Jiao Teng
Phys. Rev. B 92, 115404 – Published 4 September 2015

Abstract

The generation and control of the valley-polarized current play the key roles in valleytronics applications, but still remain as tough challenges. We propose a general idea of switchable valley injection, and predict theoretically that a ferromagnet-covered graphene junction would take the role of a valley injector, whose on/off state can be easily switched only by changing the magnetic direction. This scheme can be extended to other two-dimensional crystals and may lead to an alternative path for valleytronic practical applications.

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  • Received 15 June 2015
  • Revised 31 July 2015

DOI:https://doi.org/10.1103/PhysRevB.92.115404

©2015 American Physical Society

Authors & Affiliations

Chen Hu1, Wengang Lu2,*, Wei Ji3,4, Guanghua Yu1, Yu Yan5, and Jiao Teng1,†

  • 1Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China
  • 2Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 3Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China
  • 4Department of Physics and Astronomy, Collaborative Innovation Center of Advanced Microstructures, Shanghai Jiao Tong University, Shanghai 200240, China
  • 5Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083, China

  • *wglu@iphy.ac.cn
  • tengjiao@mater.ustb.edu.cn

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Vol. 92, Iss. 11 — 15 September 2015

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