Semiconductor–half metal transition at the Fe3O4(001) surface upon hydrogen adsorption

Gareth S. Parkinson, Narasimham Mulakaluri, Yaroslav Losovyj, Peter Jacobson, Rossitza Pentcheva, and Ulrike Diebold
Phys. Rev. B 82, 125413 – Published 9 September 2010

Abstract

The adsorption of H on the magnetite (001) surface was studied with photoemission spectroscopies, scanning tunneling microscopy, and density-functional theory. At saturation coverage the insulating (2×2)R45° reconstruction is lifted and the surface undergoes a semiconductor–half metal transition. This transition involves subtle changes in the local geometric structure linked to an enrichment of Fe2+ cations at the surface. The ability to manipulate the electronic properties by surface engineering has important implications for magnetite-based spintronic devices.

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  • Received 8 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.125413

©2010 American Physical Society

Authors & Affiliations

Gareth S. Parkinson1,2, Narasimham Mulakaluri3,4, Yaroslav Losovyj5, Peter Jacobson1,2, Rossitza Pentcheva3, and Ulrike Diebold1,2,*

  • 1Department of Physics, Tulane University, New Orleans, Louisiana 70118, USA
  • 2Institute of Applied Physics, Vienna University of Technology, Vienna, Austria
  • 3Department of Earth and Environmental Sciences, University of Munich, Theresienstr. 41, 80333 Munich, Germany
  • 4Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
  • 5Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Highway, Baton Rouge, Louisiana 70806, USA

  • *diebold@iap.tuwien.ac.at

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Vol. 82, Iss. 12 — 15 September 2010

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