Abstract
The structure and composition of Sb-induced reconstructions on the GaAs(001) surface have been systematically studied using scanning tunneling microscopy, reflectance-difference spectroscopy, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and first-principles calculations. We show that several types of Sb-induced reconstructions are formed, depending on the Sb coverage. The surface with low Sb coverages has the structure with only one anion dimer at the outermost layer. For the Sb-rich phase, on the other hand, we propose the structure model consisting of anion dimers at the first and third layers and three-coordinated As atoms at the second layer.
2 More- Received 6 May 2009
DOI:https://doi.org/10.1103/PhysRevB.80.235329
©2009 American Physical Society