Variable stoichiometry in Sb-induced (2×4) reconstructions on GaAs(001)

Akihiro Ohtake, Motoi Hirayama, Jun Nakamura, and Akiko Natori
Phys. Rev. B 80, 235329 – Published 23 December 2009

Abstract

The structure and composition of Sb-induced (2×4) reconstructions on the GaAs(001) surface have been systematically studied using scanning tunneling microscopy, reflectance-difference spectroscopy, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and first-principles calculations. We show that several types of Sb-induced (2×4) reconstructions are formed, depending on the Sb coverage. The (2×4) surface with low Sb coverages has the structure with only one anion dimer at the outermost layer. For the Sb-rich (2×4) phase, on the other hand, we propose the structure model consisting of anion dimers at the first and third layers and three-coordinated As atoms at the second layer.

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  • Received 6 May 2009

DOI:https://doi.org/10.1103/PhysRevB.80.235329

©2009 American Physical Society

Authors & Affiliations

Akihiro Ohtake*

  • National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan

Motoi Hirayama, Jun Nakamura, and Akiko Natori

  • Department of Electronic-Engineering, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo 182-8585, Japan

  • *Author to whom correspondence should be addressed; ohtake.akihiro@nims.go.jp

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Vol. 80, Iss. 23 — 15 December 2009

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