Temperature-dependent resistivity of ferromagnetic Ga1xMnxAs: Interplay between impurity scattering and many-body effects

F. V. Kyrychenko and C. A. Ullrich
Phys. Rev. B 80, 205202 – Published 6 November 2009

Abstract

The static conductivity of the diluted magnetic semiconductor Ga1xMnxAs is calculated using an equation of motion approach for the current response combined with time-dependent density-functional theory to account for Hartree and exchange interactions within the hole gas. We find that the Coulomb scattering off the charged impurities alone is not sufficient to explain the experimentally observed drop in resistivity below the ferromagnetic transition temperature: the often overlooked scattering off the fluctuations of localized spins is shown to play a significant role.

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  • Received 18 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.205202

©2009 American Physical Society

Authors & Affiliations

F. V. Kyrychenko and C. A. Ullrich

  • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA

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Issue

Vol. 80, Iss. 20 — 15 November 2009

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