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Gap opening in the zeroth Landau level of graphene

A. J. M. Giesbers, L. A. Ponomarenko, K. S. Novoselov, A. K. Geim, M. I. Katsnelson, J. C. Maan, and U. Zeitler
Phys. Rev. B 80, 201403(R) – Published 11 November 2009

Abstract

We have measured a strong increase of the low-temperature resistivity ρxx and a zero-value plateau in the Hall conductivity σxy at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in ρxx and the anomalous ν=0 plateau in σxy in terms of coexisting electrons and holes in the same split zero-energy Landau level.

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  • Received 6 April 2009

DOI:https://doi.org/10.1103/PhysRevB.80.201403

©2009 American Physical Society

Authors & Affiliations

A. J. M. Giesbers1, L. A. Ponomarenko2, K. S. Novoselov2, A. K. Geim2, M. I. Katsnelson3, J. C. Maan1, and U. Zeitler1,*

  • 1High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands
  • 2Department of Physics, University of Manchester, M13 9PL Manchester, United Kingdom
  • 3Theory of Condensed Matter, Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands

  • *u.zeitler@science.ru.nl

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Issue

Vol. 80, Iss. 20 — 15 November 2009

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