Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model

C. Baumgart, M. Helm, and H. Schmidt
Phys. Rev. B 80, 085305 – Published 7 August 2009

Abstract

Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and nanostructured Si with shallow or buried selectively doped regions under ambient conditions. A unique KPFM model correlates the measured Kelvin bias with the calculated Fermi energy, and thus allows quantitative dopant profiling. We show that due to an asymmetric electric-dipole formation at the semiconductor surface the measured Kelvin bias is related with the difference between Fermi energy and respective band edge, and independent of the probe potential.

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  • Received 14 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.085305

©2009 American Physical Society

Authors & Affiliations

C. Baumgart, M. Helm, and H. Schmidt

  • Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden–Rossendorf e.V., P.O. Box 510119, 01314 Dresden, Germany

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Issue

Vol. 80, Iss. 8 — 15 August 2009

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