Effect of oxygen on single-wall silicon carbide nanotubes studied by first-principles calculations

Á. Szabó and A. Gali
Phys. Rev. B 80, 075425 – Published 19 August 2009

Abstract

According to the predictions of first-principles calculations, single-wall silicon carbide nanotubes exhibit several unusual properties: they are semiconducting independently of their chirality, superior material for hydrogen storage, and have strong nonlinear optical coefficients. Nevertheless, only a single experiment indicates, in our knowledge, that a tubular form of silicon carbide (SiC) exists. It is known that the surface of bulk silicon carbide is oxidized in the presence of oxygen; therefore, oxygen may destabilize its tubular form. We applied ab initio density-functional theory calculations to investigate this important issue. We found that (i) the structure of silicon carbide nanotubes remain intact in ambient oxygen, (ii) but the oxygen molecule dissociates as interstitials on silicon carbide nanotubes even at room temperature, and (iii) the interstitial oxygen is a fast diffuser on SiC nanotubes.

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  • Received 11 January 2009

DOI:https://doi.org/10.1103/PhysRevB.80.075425

©2009 American Physical Society

Authors & Affiliations

Á. Szabó1 and A. Gali1,2,*

  • 1Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
  • 2Department of Physics and School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

  • *agali@eik.bme.hu

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Vol. 80, Iss. 7 — 15 August 2009

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