Atomistic and electronic structure of antisite defects in yttrium aluminum garnet: Density-functional study

Ana Belén Muñoz-García, Emilio Artacho, and Luis Seijo
Phys. Rev. B 80, 014105 – Published 13 July 2009

Abstract

First-principles density-functional theory calculations have been performed on the atomistic structure, electronic structure, and distribution of antisite defects (AD) in yttrium aluminum garnet (YAG) Y3Al5O12. The formations of one and two antisite defects per unit cell are endothermic and the formation energy per defect is lower in 2AD than in 1AD. In the most stable 1AD structure, Y and Al are as close as possible and two oxygen atoms become unbound to Al rising the energy of their (highest) valence levels and introducing a defect level in the gap 0.25 eV above the top of the perfect YAG valence band. The binding energy between the individual substitutional defects YAl and AlY to form 1AD is 0.74 eV. The most stable 2AD structure is made of two single ADs linked together with one AlO6 moiety and it has basically the same electronic structure as the most stable 1AD; it is the only 2AD structure that preserves the inversion center with respect to the unit-cell center. In this case, the binding energy between two single ADs is 0.22 eV.

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  • Received 29 April 2009

DOI:https://doi.org/10.1103/PhysRevB.80.014105

©2009 American Physical Society

Authors & Affiliations

Ana Belén Muñoz-García

  • Departamento de Química, C-XIV, Universidad Autónoma de Madrid, 28049 Madrid, Spain

Emilio Artacho

  • Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, United Kingdom

Luis Seijo

  • Departamento de Química, C-XIV, Universidad Autónoma de Madrid, 28049 Madrid, Spain and Instituto Universitario de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid, Spain

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Vol. 80, Iss. 1 — 1 July 2009

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