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Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well

Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, and Yasuhiro Shiraki
Phys. Rev. B 79, 241302(R) – Published 2 June 2009

Abstract

We study magnetotransport in a high-mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau-level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.

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  • Received 1 May 2009

DOI:https://doi.org/10.1103/PhysRevB.79.241302

©2009 American Physical Society

Authors & Affiliations

Tohru Okamoto1, Kohei Sasaki1, Kiyohiko Toyama1, Ryuichi Masutomi1, Kentarou Sawano2, and Yasuhiro Shiraki2

  • 1Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

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Issue

Vol. 79, Iss. 24 — 15 June 2009

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