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Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, M. Schäfer, M. Kira, and S. W. Koch
Phys. Rev. B 79, 201306(R) – Published 19 May 2009

Abstract

Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced nonequilibrium effects in the relaxation dynamics of the optically injected carrier distributions are observed and analyzed using a microscopic many-body theory. Transient population inversion and optical gain is obtained on a femtosecond time scale for excitation at energies slightly above the lowest direct quantum-well transition.

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  • Received 4 March 2009

DOI:https://doi.org/10.1103/PhysRevB.79.201306

©2009 American Physical Society

Authors & Affiliations

C. Lange1,*, N. S. Köster1, S. Chatterjee1, H. Sigg2, D. Chrastina3, G. Isella3, H. von Känel3, M. Schäfer4, M. Kira4, and S. W. Koch4

  • 1Faculty of Physics and Material Sciences Center, Philipps-Universität, Renthof 5, D-35032 Marburg, Germany
  • 2Laboratory for Micro and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
  • 3Dipartimento di Fisica del Politecnico di Milano, CNISM and L-NESS, Polo di Como, via Anzani 42, I-22100 Como, Italy
  • 4Department of Physics and Material Sciences Center, Philipps University, Renthof 5, D-35032 Marburg, Germany

  • *christoph.lange@physik.uni-marburg.de

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Vol. 79, Iss. 20 — 15 May 2009

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