Abstract
We report theoretical results demonstrating that photoionization can be a useful tool for investigating single-electron transistors. It permits to obtain information on the quantum dot occupancy and the charging energy in a direct manner, and not indirectly, as done in transport experiments. It is worth emphasizing that in the photoionization processes considered by us, an electron absorbs a photon with energy of the order of the work functions and is ejected into the vacuum. This phenomenon is completely different from the widely investigated photoassisted tunneling. There, an electron tunnels through a Coulomb island from one electrode to another by absorbing a photon of much lower energy of the order of the charging energy (typically, a few meV). Suggestions are given on how to conduct experiments using photoionization alone or in combination with transport measurements. Monitoring zero kinetic-energy (ZEKE) photoelectrons is especially recommended because ZEKE spectroscopy offers a better resolution than the standard photoemission.
- Received 18 November 2008
DOI:https://doi.org/10.1103/PhysRevB.79.165317
©2009 American Physical Society