Abstract
We report spatially resolved charge noise measurements on semiconductor samples by atomic force microscopy. We observed charge noise induced by light illumination on an InP/InGaAs heterostructure with surface InAs quantum dots and a buried two-dimensional electron gas. The observed noise exhibits generation-recombination noise or random telegraph noise depending on light intensity and bias voltage. A spatial resolution better than 20 nm was demonstrated by comparing the noise on and off the InAs quantum dots. The approach enables the localization of individual traps and will aid in understanding noise mechanisms.
- Received 23 January 2009
DOI:https://doi.org/10.1103/PhysRevB.79.121309
©2009 American Physical Society