Transport gap in side-gated graphene constrictions

F. Molitor, A. Jacobsen, C. Stampfer, J. Güttinger, T. Ihn, and K. Ensslin
Phys. Rev. B 79, 075426 – Published 13 February 2009

Abstract

We present measurements on side-gated graphene constrictions of different geometries. We characterize the transport gap by its width in back-gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side-gate voltage on the transport gap and show that high side-gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.

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  • Received 4 November 2008

DOI:https://doi.org/10.1103/PhysRevB.79.075426

©2009 American Physical Society

Authors & Affiliations

F. Molitor*, A. Jacobsen, C. Stampfer, J. Güttinger, T. Ihn, and K. Ensslin

  • Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

  • *fmolitor@phys.ethz.ch

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Issue

Vol. 79, Iss. 7 — 15 February 2009

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