Ultrafast carrier dynamics in Br+-bombarded InP studied by time-resolved terahertz spectroscopy

H. Němec, L. Fekete, F. Kadlec, P. Kužel, M. Martin, J. Mangeney, J. C. Delagnes, and P. Mounaix
Phys. Rev. B 78, 235206 – Published 29 December 2008

Abstract

Ultrafast dynamics of charge carriers in Br+-bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from 109 up to 1012cm2 were determined. The lifetime of photoexcited carriers appears to be determined primarily by the density of defects resulting from host-atom displacements while it is not significantly influenced by the Br-atom implantation. In the most irradiated sample, a carrier lifetime as short as 300 fs was found. All samples exhibit a high mobility (3000900cm2V1s1); the lower values correspond to a smaller irradiation dose. In selected samples, the density of traps along with electron and hole lifetimes was determined.

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  • Received 15 September 2008

DOI:https://doi.org/10.1103/PhysRevB.78.235206

©2008 American Physical Society

Authors & Affiliations

H. Němec, L. Fekete, F. Kadlec, and P. Kužel

  • Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic

M. Martin and J. Mangeney

  • Institut d’Electronique Fondamentale, Université Paris XI, UMR CNRS 8622, 91405 Orsay Cedex, France

J. C. Delagnes and P. Mounaix

  • Centre de Physique Moléculaire Optique et Hertzienne, Université Bordeaux I, UMR CNRS 5798, 351 Cours de la Libération, 33405 Talence Cedex, France

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Issue

Vol. 78, Iss. 23 — 15 December 2008

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