Abstract
Ultrafast dynamics of charge carriers in -bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from up to were determined. The lifetime of photoexcited carriers appears to be determined primarily by the density of defects resulting from host-atom displacements while it is not significantly influenced by the Br-atom implantation. In the most irradiated sample, a carrier lifetime as short as 300 fs was found. All samples exhibit a high mobility ; the lower values correspond to a smaller irradiation dose. In selected samples, the density of traps along with electron and hole lifetimes was determined.
- Received 15 September 2008
DOI:https://doi.org/10.1103/PhysRevB.78.235206
©2008 American Physical Society