Full counting statistics of crossed Andreev reflection

Jan Petter Morten, Daniel Huertas-Hernando, Wolfgang Belzig, and Arne Brataas
Phys. Rev. B 78, 224515 – Published 16 December 2008

Abstract

We calculate the full transport counting statistics in a three-terminal tunnel device with one superconducting source and two normal-metal or ferromagnet drains. We obtain the transport probability distribution from direct Andreev reflection, crossed Andreev reflection, and electron transfer which reveals how these processes’ statistics are determined by the device conductances. The cross-correlation noise is a result of competing contributions from crossed Andreev reflection and electron transfer, as well as antibunching due to the Pauli exclusion principle. For spin-active tunnel barriers that spin polarize the electron flow, crossed Andreev reflection and electron transfer statistics exhibit different dependencies on the magnetization configuration and can be controlled by relative magnetization directions and voltage bias.

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  • Received 17 September 2008

DOI:https://doi.org/10.1103/PhysRevB.78.224515

©2008 American Physical Society

Authors & Affiliations

Jan Petter Morten1,*, Daniel Huertas-Hernando1, Wolfgang Belzig2, and Arne Brataas1

  • 1Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim, Norway
  • 2Department of Physics, University of Konstanz, D-78457 Konstanz, Germany

  • *janpette@tf.phys.ntnu.no

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Issue

Vol. 78, Iss. 22 — 1 December 2008

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